DocumentCode
2257950
Title
A self-aligned double-gate polysilicon TFT technology
Author
Zhang, Shengdong ; Han, Ruqi ; Sin, Johnny K O ; Chan, Mansun
Author_Institution
Dept. of EEE, Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear
2001
fDate
2001
Firstpage
395
Lastpage
398
Abstract
In this paper, a simple self-aligned double-gate TFT (SADG TFT) technology is demonstrated for the first time, which has a number of advanced features including: (1) self-aligned top and bottom gate; (2) extremely thin channel (body) for higher current drive and scalability; (3) self-aligned thick source/drain region to reduce series resistance and drain electric field; and (4) metal-induced unilateral crystallization (MIUC) for poly-Si grain size enhancement
Keywords
crystallisation; elemental semiconductors; grain size; silicon; thin film transistors; SADG TFT; Si; extremely thin channel; metal-induced unilateral crystallization; poly-Si grain size enhancement; self-aligned bottom gate; self-aligned double-gate polysilicon TFT technology; self-aligned thick source/drain region; self-aligned top gate; Crystallization; Dielectric substrates; Fabrication; Immune system; Microelectronics; Partial response channels; Scalability; Silicon compounds; Temperature; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984527
Filename
984527
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