Temporary bonding/de-bonding and permanent wafer bonding solutions for 3D integration

Author

Ishida, Hiroto ; Sood, S. ; Rosenthal, Christopher ; Lutter, Stefan

Author_Institution

SUSS MicroTec KK, Yokohama, Japan

fYear

2012

fDate

10-12 Dec. 2012

Firstpage

1

Lastpage

4

Abstract

Thin wafer handling (or temporary bonding/de-bonding) and permanent wafer bonding are two of the key enabling technologies for 3D-IC integration process. Temporary bonding adhesive in conjunction with de-bonding method has to be carefully selected to obtain damage-free thinned processed wafers. Room temperature mechanical lift-off de-bonding method with proper de-bond wave front control is considered to be promising. Metal-adhesive or metal-oxide hybrid bonding can create a final stacked 3D-IC structure with superior mechanical strength, electrical performance and excellent post-bond alignment.

Keywords

adhesive bonding; mechanical strength; three-dimensional integrated circuits; wafer bonding; 3D-IC integration process; damage-free thinned processed wafers; electrical performance; mechanical strength; metal-adhesive; metal-oxide hybrid bonding; permanent wafer bonding solutions; post-bond alignment; room temperature mechanical lift-off de-bonding method; temperature 293 K to 298 K; temporary bonding adhesive; temporary debonding method; thin wafer handling; wave front control;

fLanguage

English

Publisher

ieee

Conference_Titel

CPMT Symposium Japan, 2012 2nd IEEE

Conference_Location

Kyoto

Print_ISBN

978-1-4673-2654-4

Type

conf

DOI

10.1109/ICSJ.2012.6523416

Filename

6523416