Modeling and limitations of AlGaN/GaN HFETs

Author

Trew, R.J.

Author_Institution

ECE Dept., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

2001

fDate

2001

Firstpage

432

Lastpage

435

Abstract

Field effect transistors based upon the AlGaN/GaN system often demonstrate current slump and premature saturation of the gain, accompanied by degradation of the RF output power and power-added efficiency. It is shown that source resistance modulation under high current injection conditions can produce premature saturation effects consistent with experimental data. Elimination of the effect will require design modifications that increase the threshold for space-charge effects to become significant

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; microwave field effect transistors; semiconductor device models; semiconductor heterojunctions; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; HFETs; RF output power; current slump; device limitations; device linearity degradation; heterostructure field effect transistors; high current injection conditions; modeling; power-added efficiency; premature gain saturation; source resistance modulation; space-charge effects; Aluminum gallium nitride; Current slump; Degradation; FETs; Gallium nitride; HEMTs; MODFETs; Power generation; Power system modeling; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984538

Filename

984538