DocumentCode
2258795
Title
Modeling isolation-induced mechanical stress effect on SOI MOS devices
Author
Su, Ke-Wei ; Chen, Kuang-Hsin ; Chung, Tang-Xuan ; Chen, Hung-Wei ; Huang, Cheng-Chuan ; Chen, Hou-Yu ; Chang, Chang-Yun ; Lee, Di-Hong ; Wen, Cheng-Kuo ; Sheu, Yi-Ming ; Yang, Sheng-Jier ; Chiang, Chung-Shi ; Huang, Chien-Chao ; Yang, Fu-Liang ; Chia, Yu
Author_Institution
TSMC, Hsinchu, Taiwan
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
80
Lastpage
82
Abstract
In this paper, the mechanical stress effect of SOI MOS devices was analysed. The width dependence of stress effect and drain current shift were evaluated.
Keywords
MIS devices; MOSFET; elemental semiconductors; semiconductor device models; silicon-on-insulator; stress effects; SOI MOS devices; Si; drain current shift; modeling isolation-induced mechanical stress effect; MIS devices; MOSFETs; Semiconductor device modeling; Silicon on insulator technology; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242907
Filename
1242907
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