• DocumentCode
    2258927
  • Title

    Double gate MOSFET subthreshold logic for ultra-low power applications

  • Author

    Kim, JaeJoon ; Roy, Kaushik

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    97
  • Lastpage
    98
  • Abstract
    In this paper, we show that double gate MOSFET is a promising device for subthreshold operations due to its (1) steep subthreshold slope (s) and (2) small gate capacitance in the subthreshold region. It is also shown that long channel DG MOSFET is better than short channel DG MOSFET for subthreshold operations in terms of performance and tolerance to process variation.
  • Keywords
    MOSFET; capacitance; double gate MOSFET subthreshold logic; gate capacitance; subthreshold operations; subthreshold slope; ultra low power applications; Capacitance; MOSFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242913
  • Filename
    1242913
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258927