DocumentCode
2259095
Title
Electron and hole contribution to thermal noise in short-channel MOSFETs
Author
Obrecht, Michael S. ; Hornsey, Richard ; Manku, Tajinder
Author_Institution
Siborg Syst. Inc., Waterloo, Ont., Canada
fYear
2001
fDate
2001
Firstpage
540
Lastpage
542
Abstract
We used a 2D Green´s function method similar to the Impedance Field Method for an accurate high frequency noise analysis. The method has been proven to reasonably well predict the noise performance of semiconductor devices, including MOSFETs. In the present paper we applied the method to a 0.2μm gate NMOSFET
Keywords
Green´s function methods; MOSFET; semiconductor device models; semiconductor device noise; thermal noise; 0.2 micron; 2D Greens function method; NMOSFET; electron contribution; high frequency noise analysis; hole contribution; noise performance; semiconductor devices; short-channel MOSFETs; thermal noise; Active noise reduction; Charge carrier processes; Electrons; Frequency domain analysis; Green function; Impedance; MOSFET circuits; Semiconductor device noise; Semiconductor devices; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984572
Filename
984572
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