DocumentCode
2259374
Title
Mobility enhancement via volume inversion in double-gate MOSFETs
Author
Ge, Lixin ; Fossum, Jerry G. ; Gamiz, Francisco
Author_Institution
Digital DNA Labs., Motorola Inc., Austin, TX, USA
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
153
Lastpage
154
Abstract
In this paper, we describe the mobility enhancement via moderate as well as strong volume inversion, in asymmetrical DG (ADG) as well as SDG MOSFETs.
Keywords
MOSFET; Monte Carlo methods; electron mobility; elemental semiconductors; semiconductor device models; semiconductor thin films; silicon; Si; asymmetrical double gate MOSFET; electron mobility; volume inversion; Charge carrier mobility; MOSFETs; Monte Carlo methods; Semiconductor device modeling; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242934
Filename
1242934
Link To Document