Electron transport in heterostructures AlGaN/GaN doped with silicon

Author

Latyshev, Alexandr N. ; Antonova, Irina V.

Author_Institution

Novosibirsk State Tech. Univ., Russia

fYear

2005

fDate

1-5 July 2005

Firstpage

39

Lastpage

40

Abstract

The aim of the present study was the comparison of the electron transport in vertical AlGaN/GaN heterostructures with different doping level of AlGaN layer. It was found the current oscillations as a function of applied voltage in the case of heterostructures with the high doping level of AlGaN layer. The current-voltage and capacitance-voltage characteristics were measured in the temperature range of 80-400 K. Two types of AlGaN/GaN heterostructures were used for study: (1) undoped heterostructures (structures of A type); and (2) heterostructures with doped AlGaN layer (structures B type). Current in vertical AlGaN/GaN heterostructures are not practically depended on temperature in the range of 80-300K.

Keywords

III-V semiconductors; aluminium compounds; electron transport theory; elemental semiconductors; gallium compounds; semiconductor doping; semiconductor heterojunctions; silicon; wide band gap semiconductors; 80 to 400 K; AlGaN-GaN:Si; capacitance-voltage characteristics; current oscillations; current-voltage characteristics; doping level; electron transport; undoped heterostructures; vertical heterostructures; Aluminum gallium nitride; Capacitance measurement; Capacitance-voltage characteristics; Doping; Electrons; Gallium nitride; Silicon; Temperature distribution; Temperature measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on

ISSN

1815-3712

Print_ISBN

5-7782-0491-4

Type

conf

DOI

10.1109/SIBEDM.2005.195577

Filename

1523182