Examination of dimer formation on Si(001) by Monte Carlo simulation

Author

Nastovjak, Alla G. ; Romanyuk, Konstantin N. ; Shwartz, Nalatia L. ; Yanovitskaja, Zoya Sh ; Zinchenko, Konstantin Yu ; Zverev, Alexey V.

Author_Institution

Novosibirsk State Tech. Univ., Russia

fYear

2005

fDate

1-5 July 2005

Firstpage

41

Lastpage

44

Abstract

Investigation of dimers influence on surface relief during annealing and deposition processes were carried out using Monte Carlo simulation. A new program package SilSim3D-7comp taking into account covalent bonds dimerization on the surface of diamond-like crystals was developed. Dimers formation on [001] and (105) surfaces was analyzed. Dimers were demonstrated to be responsible for surface relief stabilization.

Keywords

Monte Carlo methods; annealing; association; bonds (chemical); elemental semiconductors; molecules; silicon; Monte Carlo simulation; Si; SilSim3D-7comp; annealing; covalent bonds dimerization; deposition processes; dimer formation; Atomic layer deposition; Crystals; Molecular beam epitaxial growth; Packaging; Quantum dots; Semiconductor process modeling; Substrates; Surface cleaning; Surface morphology; Surface reconstruction;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on

ISSN

1815-3712

Print_ISBN

5-7782-0491-4

Type

conf

DOI

10.1109/SIBEDM.2005.195578

Filename

1523183