DocumentCode
2264811
Title
Poly silicon deposition process improvement on 300 mm wafers (PC23)
Author
Lin, Bo ; Patel, Nital S. ; Boone, John
Author_Institution
Texas Instrum., Dallas, TX, USA
fYear
2003
fDate
30 Sept.-2 Oct. 2003
Firstpage
119
Lastpage
122
Abstract
This paper presents the application of advanced process control (APC) to tighten the distribution of LPCVD deposited polysilicon thickness during device manufacturing on 300mm wafers. Using APC, a 40% reduction in thickness variation is achieved. This improvement is possible by 1) automatically feeding back deposition time adjustments, 2) introduction of load size based compensation and 3) optimizing the response factor in the feed back loop.
Keywords
chemical vapour deposition; elemental semiconductors; integrated circuit manufacture; process control; semiconductor device manufacture; semiconductor growth; semiconductor thin films; silicon; 300 mm; LPCVD deposited polysilicon; Si; advanced process control; automatically feeding back deposition; feed back loop; poly silicon deposition; Costs; Instruments; Manufacturing processes; Metrology; Monitoring; Process control; Production; Silicon; Size control; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2003 IEEE International Symposium on
ISSN
1523-553X
Print_ISBN
0-7803-7894-6
Type
conf
DOI
10.1109/ISSM.2003.1243245
Filename
1243245
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