DocumentCode
226492
Title
2.2ppm/°C bandgap voltage reference with high-order temperature compensation
Author
Osipov, Dmitry
Author_Institution
ASIC Lab., Nat. Res. Nucl. Univ. MEPHI (Moscow Eng. Phys. Inst.), Moscow, Russia
fYear
2014
fDate
9-10 Sept. 2014
Firstpage
239
Lastpage
242
Abstract
A 2.2-ppm/°C voltage reference is proposed for use as an analog to digital conversion reference in readout application-specific integrated circuits. The proposed circuit uses resistors available for the standard CMOS process with opposite sign temperature coefficients. That enables a superposition of two bandgap schemes, one with downward concave and the other upward concave voltage temperature dependence. Using two similar schemes for the task allows topology matching of single circuit elements. The providen schematic is verified by simulation of the reference in 0.35 μm technology. The simulated reference provides a voltage of about 1.2 mV with the variation of ~300 μV in the temperature range -20 to 85°C. The operating temperature range is the reduced industrial grade, with a supply voltage of 3.3V, and an average consumption current of 6:4μA in the operating temperature range.
Keywords
CMOS integrated circuits; analogue-digital conversion; application specific integrated circuits; readout electronics; CMOS; analog to digital conversion reference; circuit elements; high-order temperature compensation; readout application-specific integrated circuits; resistors; size 0.35 mum; temperature -20 C to 85 C; topology matching; voltage 3.3 V; voltage 300 muV; CMOS integrated circuits; Photonic band gap; Resistors; System-on-chip; Temperature dependence; Temperature distribution; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Electronics (AE), 2014 International Conference on
Conference_Location
Pilsen
ISSN
1803-7232
Print_ISBN
978-8-0261-0276-2
Type
conf
DOI
10.1109/AE.2014.7011710
Filename
7011710
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