• DocumentCode
    2265215
  • Title

    Electron transport in extremely scaled SiGe HBTs

  • Author

    Hong, S.-M. ; Jungemann, C.

  • Author_Institution
    Inst. for Microelectron. & Circuits, Bundeswehr Univ., Neubiberg, Germany
  • fYear
    2009
  • fDate
    12-14 Oct. 2009
  • Firstpage
    67
  • Lastpage
    74
  • Abstract
    Transport and noise in nanoscale SiGe HBTs are investigated by classical TCAD tools and full solutions of the more physics-based Boltzmann equation. The more scaled the transistor is, the more quasi-ballistic is the transport and the classical TCAD models become less and less accurate.
  • Keywords
    Boltzmann equation; Ge-Si alloys; electron transport theory; heterojunction bipolar transistors; semiconductor device models; technology CAD (electronics); HBT; SiGe; TCAD; electron transport; heterojunction bipolar transistors; physics-based Boltzmann equation; Boltzmann equation; Computational modeling; Cutoff frequency; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; High definition video; Impact ionization; Silicon germanium; Stochastic resonance; Boltzmann equation; SiGe HBT; spherical harmonics expansion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
  • Conference_Location
    Capri
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-4894-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2009.5314141
  • Filename
    5314141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2265215