Femtosecond micromachining of InP: analysis of ablation rates, morphology and residual strain

Author

Borowiec, A. ; Haugen, H.K.

Author_Institution

Inst. for Mater. Res., McMaster Univ., Hamilton, Ont., Canada

fYear

2002

fDate

24-24 May 2002

Firstpage

220

Abstract

Summary form only given. We presented detailed results of micromachining of InP with 120 fs, 800 nm pulses, with an emphasis on measuring the ablation rates, groove geometries and residual strain with various machining parameters such as pulse energy, cutting speed and number of consecutive passes. The geometry and morphology of the cuts were analyzed by scanning electron microscopy (SEM) and strain measurements were performed with a degree of polarization technique (DOP).

Keywords

III-V semiconductors; indium compounds; laser ablation; laser beam machining; micromachining; scanning electron microscopy; surface morphology; 120 fs; 800 nm; InP; ablation rates; cutting speed; degree of polarization technique; femtosecond micromachining; groove geometries; machining parameters; morphology; number of consecutive passes; pulse energy; residual strain; scanning electron microscopy; strain measurements; Capacitive sensors; Energy measurement; Geometry; Indium phosphide; Micromachining; Morphology; Pulse measurements; Scanning electron microscopy; Strain measurement; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1033643

Filename

1033643