Subthreshold current for submicron LDD MOS transistor

For LDD devices, the voltage drop in the lightly doped, n ^{region will strongly affect the subthreshold current, and must be modeled accurately. The assumptions that the entire drain-source voltage drops across the drain-channel junction and that the channel is independent of V_DS no longer hold. This paper models the subthreshold current for nMOS device down to effective channel length of 0.6 μm, based on drift-diffusion theory, taking into account the DIBL effects. The results are compared with experimental data for submicrometer nMOS devices}