DocumentCode
2266216
Title
Elimination of CMP process in BEOL by using Low-k scan planarization
Author
Mizuno, Takayuki ; Saito, Kazuyuki
Author_Institution
Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan
fYear
2003
fDate
30 Sept.-2 Oct. 2003
Firstpage
392
Lastpage
395
Abstract
The improvement of global planarity after the Low-k film formation is indispensable for raise of the yield and reduction of the steps for planarization in dual damascene multilayer interconnection process. We confirmed that scan coating has more excellent uniformity and planarization ability than conventional spin coating.
Keywords
chemical mechanical polishing; copper; integrated circuit manufacture; metallic thin films; planarisation; BEOL; CMP; Cu; dual damascene multilayer interconnection process; low-k film formation; low-k scan planarization; Area measurement; Coatings; Dielectric measurements; Equations; Fluid flow measurement; Planarization; Position measurement; Q measurement; Shape measurement; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2003 IEEE International Symposium on
ISSN
1523-553X
Print_ISBN
0-7803-7894-6
Type
conf
DOI
10.1109/ISSM.2003.1243310
Filename
1243310
Link To Document