DocumentCode
2266389
Title
Mathematical behavior of integration methods with non continuous first derivative devices in circuit simulation
Author
Cremascoli, Paolo ; Gubian, Paolo
Author_Institution
Dipartimento di Autom. Ind., Brescia Univ., Italy
fYear
1993
fDate
16-18 Aug 1993
Firstpage
1225
Abstract
Computation of MOS transistor channel currents in SPICE transient analysis may give rise to unrealistic oscillations when charge-control models are used for MOS devices in connection with the trapezoidal integration method: this problem is related to the criterion used to estimate the truncation error associated to the last computed timepoint. A new algorithm for step-size control and choice of the integration method in SPICE transient analysis, based on computation of a Local Error Estimate (LEE), has been developed which avoids the above mentioned oscillations. The algorithm has been implemented in SPICE and preliminary results show that it does not give rise to oscillations while imposing a low overhead on the computational effort
Keywords
MOS analogue integrated circuits; MOSFET; SPICE; circuit analysis computing; integration; semiconductor device models; transient analysis; MOS transistor channel currents; SPICE transient analysis; charge-control models; circuit simulation; computational effort; integration methods; last computed timepoint; local error estimate; noncontinuous first derivative devices; step-size control; trapezoidal integration method; Capacitance; Capacitors; Circuit analysis computing; Circuit simulation; Equations; MOS devices; MOSFETs; SPICE; Transient analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1993., Proceedings of the 36th Midwest Symposium on
Conference_Location
Detroit, MI
Print_ISBN
0-7803-1760-2
Type
conf
DOI
10.1109/MWSCAS.1993.343316
Filename
343316
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