• DocumentCode
    2266541
  • Title

    Adsorption of residual trace impurities in UPW onto wafer surface

  • Author

    Kogure, M. ; Yonehara ; Sakurai, Takayasu ; Ohmi, Tadahiro

  • Author_Institution
    Nomura Micro Sci. Co. Ltd., Kanagawa-ken, Japan
  • fYear
    2003
  • fDate
    30 Sept.-2 Oct. 2003
  • Firstpage
    471
  • Lastpage
    474
  • Abstract
    The state-of-the-art UPW (Ultra Pure Water) production technology has reduced almost all impurities in UPW below their determination limit. Trace metals still remaining in UPW, however, are considered to adversely affect yield of semiconductor device that has been hitting the theoretical limit. Integral adsorption method is a means to accurately measure trace impurities in UPW by concentrating and getting them adsorbed onto Si substrate. By using this method, authors precisely studied behavior of residual trace impurities in UPW and have revealed that they are highly likely to form impurity complexes by coagulating with colloidal matters or organic impurities.
  • Keywords
    adsorption; copper; impurities; iron; nickel; surface contamination; water; Si; Si substrate; UPW; adsorption; coagulation; colloidal matter; organic impurity; residual trace impurity; semiconductor device; ultrapure water; wafer surface; Biomembranes; Chemical technology; Cleaning; Contamination; Copper; Iron; Production; Semiconductor impurities; Substrates; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2003 IEEE International Symposium on
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7894-6
  • Type

    conf

  • DOI
    10.1109/ISSM.2003.1243329
  • Filename
    1243329