DocumentCode
2266541
Title
Adsorption of residual trace impurities in UPW onto wafer surface
Author
Kogure, M. ; Yonehara ; Sakurai, Takayasu ; Ohmi, Tadahiro
Author_Institution
Nomura Micro Sci. Co. Ltd., Kanagawa-ken, Japan
fYear
2003
fDate
30 Sept.-2 Oct. 2003
Firstpage
471
Lastpage
474
Abstract
The state-of-the-art UPW (Ultra Pure Water) production technology has reduced almost all impurities in UPW below their determination limit. Trace metals still remaining in UPW, however, are considered to adversely affect yield of semiconductor device that has been hitting the theoretical limit. Integral adsorption method is a means to accurately measure trace impurities in UPW by concentrating and getting them adsorbed onto Si substrate. By using this method, authors precisely studied behavior of residual trace impurities in UPW and have revealed that they are highly likely to form impurity complexes by coagulating with colloidal matters or organic impurities.
Keywords
adsorption; copper; impurities; iron; nickel; surface contamination; water; Si; Si substrate; UPW; adsorption; coagulation; colloidal matter; organic impurity; residual trace impurity; semiconductor device; ultrapure water; wafer surface; Biomembranes; Chemical technology; Cleaning; Contamination; Copper; Iron; Production; Semiconductor impurities; Substrates; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2003 IEEE International Symposium on
ISSN
1523-553X
Print_ISBN
0-7803-7894-6
Type
conf
DOI
10.1109/ISSM.2003.1243329
Filename
1243329
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