DocumentCode
2268538
Title
A triangular mesh generation method suitable for the analysis of complex MOS device structures
Author
Kumashiro, Shigetaka ; Yokota, Ikuhiro
Author_Institution
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fYear
1994
fDate
5-6 Jun 1994
Firstpage
167
Lastpage
170
Abstract
A fully automatic triangular mesh generation method which can correctly handle the MOS inversion current along any arbitrary shaped channel is proposed. The key idea of this method is to introduce an interface protection layer which consists of rectangular mesh locally conformed to the material interface. The performance of this method is verified through an oblique and a SLIT transistors simulation
Keywords
MIS devices; MOSFET; mesh generation; semiconductor device models; semiconductor-insulator boundaries; MOS inversion current; SLIT transistors simulation; complex MOS device structures; interface protection layer; rectangular mesh; triangular mesh generation method; Charge carrier density; Laboratories; MOS devices; Mesh generation; National electric code; Partitioning algorithms; Protection; Smoothing methods; Springs; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Modeling of Processes and Devices for Integrated Circuits, 1994. NUPAD V., International Workshop on
Conference_Location
Honolulu, HI
Print_ISBN
0-7803-1867-6
Type
conf
DOI
10.1109/NUPAD.1994.343465
Filename
343465
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