Ultra-low on-resistance trench gate MOSFET with buried p-island

Author

Luo, Xiaorong ; Fu, Daping ; Gao, Huanmei ; Chen, Xi

Author_Institution

State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2010

fDate

28-30 July 2010

Firstpage

496

Lastpage

498

Abstract

A high voltage trench gate MOSFET (TMOS) with an ultra-low specific on-resistance (R_on) is proposed. The MOSFET is characterized by the combination of a trench gate and two buried p-islands (BPIs) formed in the n-epitaxial layer by the self-alignment (BPIs TMOS). In the blocking state, the superjunction structure, formed by the BPIs/n-drift region, sustains a higher breakdown voltage (BV). The high drift region doping concentration due to the superjunction structure lowers R_on. Influences of structure parameters on the breakdown voltage and specific on-resistance are analyzed for the proposed device by simulator MEDICI. BV of 85V and R_on of 22mΩ.mm² are obtained.

Keywords

MOSFET; buried layers; doping profiles; epitaxial layers; semiconductor device breakdown; TMOS; breakdown voltage; buried P-island; doping concentration; high voltage trench gate MOSFET; n-epitaxial layer; simulator MEDICI; superjunction structure; ultra-low specific on-resistance; MOSFET circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems (ICCCAS), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-8224-5

Type

conf

DOI

10.1109/ICCCAS.2010.5581948

Filename

5581948