DocumentCode
2270220
Title
Transient electromagnetically induced transparency in InGaAs quantum dots
Author
Marcinkevicius, S. ; Gusterov, A. ; Reithmaier, J.P.
Author_Institution
Dept. of Microelectron. & Appl. Phys., R. Inst. of Technol., Kista
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Electromagnetically induced transparency (EIT) based on exciton spin transitions is observed in InGaAs quantum dots. Inhomogeneous broadening of the quantum dot ensemble, detrimental for EIT, is effectively reduced by using spectrally narrow pulses.
Keywords
III-V semiconductors; excitons; gallium arsenide; indium compounds; semiconductor quantum dots; transparency; InGaAs; exciton spin transitions; inhomogeneous ensemble broadening; quantum dots; spectrally narrow pulses; transient electromagnetically induced transparency; Absorption; Electromagnetic transients; Excitons; Indium gallium arsenide; Optical buffering; Optical control; Optical pulses; Polarization; Quantum dots; Space vector pulse width modulation; 270.1670; 320.7130;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572993
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