External cavity multiwavelength semiconductor laser

Author

Moskalev, Igor S. ; Mirov, Sergey B. ; Fedorov, Vladimir V. ; Grimes, G.J. ; Basiev, T.T. ; Berman, E. ; Abeles, J.

Author_Institution

Alabama Univ., Birmingham, AL, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

410

Abstract

Summary from only given. We have demonstrated an external cavity multi-wavelength diode laser based on a novel spatially dispersive resonator scheme. Multi-wavelength oscillation has been achieved with a single broad-stripe diode laser operating at 660 nm and with a 1560 nm multi-stripe diode laser. One of the major advantages of our laser scheme is that it can be build on the basis of a single diode chip as well as a diode array or a multi striped diode.

Keywords

laser cavity resonators; laser reliability; laser transitions; optical dispersion; optical transmitters; semiconductor device reliability; semiconductor laser arrays; 1560 nm; 660 nm; external cavity multi-wavelength diode laser; high wavelength stability; laser diode array; multi-stripe diode laser; multi-wavelength oscillation; reliability; single broad-stripe diode laser; single diode chip; spatially dispersive resonator scheme; telecomm applications; Electric breakdown; Free electron lasers; Ionization; Laser ablation; Laser modes; Optical pulses; Plasma density; Plasma waves; Quantum cascade lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034141

Filename

1034141