DocumentCode
2271049
Title
The Evolution and Importance of Composition in RF Compound Semiconductors
Author
Barratt, C.A.
Author_Institution
RFMD, Greensboro, NC, USA
fYear
2009
fDate
11-14 Oct. 2009
Firstpage
1
Lastpage
3
Abstract
This paper was focused on the evolution and importance of RF compound semiconductor devices. RF compound semiconductors began as a set of niche diode technologies where the performance commanded sale prices that offset the costly fabrication. Developments including SEMI standard wafers and planar processing led to a period of substantial investment and gave rise to a hype cycle that drove the industry along a silicon like model. The creative use of combinations of various compositions of III-V compounds has resulted in an extremely vibrant and mature industry. The major advantage that compound semiconductors have over competing technologies is the rich pool of available alloys that can produce ever more useful device performance. Pursuit of this avenue has in many ways, compensated for the lack of a true MOSFET analog.
Keywords
III-V semiconductors; MOSFET; microwave devices; semiconductor diodes; III-V compounds; MOSFET analog; RF compound semiconductor devices; SEMI standard wafers; diode technology; planar processing; silicon like model; Fabrication; III-V semiconductor materials; Investments; Marketing and sales; Radio frequency; Semiconductor device modeling; Semiconductor devices; Semiconductor diodes; Silicon; Standards development;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location
Greensboro, NC
ISSN
1550-8781
Print_ISBN
978-1-4244-5191-3
Electronic_ISBN
1550-8781
Type
conf
DOI
10.1109/csics.2009.5315803
Filename
5315803
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