• DocumentCode
    2271049
  • Title

    The Evolution and Importance of Composition in RF Compound Semiconductors

  • Author

    Barratt, C.A.

  • Author_Institution
    RFMD, Greensboro, NC, USA
  • fYear
    2009
  • fDate
    11-14 Oct. 2009
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper was focused on the evolution and importance of RF compound semiconductor devices. RF compound semiconductors began as a set of niche diode technologies where the performance commanded sale prices that offset the costly fabrication. Developments including SEMI standard wafers and planar processing led to a period of substantial investment and gave rise to a hype cycle that drove the industry along a silicon like model. The creative use of combinations of various compositions of III-V compounds has resulted in an extremely vibrant and mature industry. The major advantage that compound semiconductors have over competing technologies is the rich pool of available alloys that can produce ever more useful device performance. Pursuit of this avenue has in many ways, compensated for the lack of a true MOSFET analog.
  • Keywords
    III-V semiconductors; MOSFET; microwave devices; semiconductor diodes; III-V compounds; MOSFET analog; RF compound semiconductor devices; SEMI standard wafers; diode technology; planar processing; silicon like model; Fabrication; III-V semiconductor materials; Investments; Marketing and sales; Radio frequency; Semiconductor device modeling; Semiconductor devices; Semiconductor diodes; Silicon; Standards development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
  • Conference_Location
    Greensboro, NC
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-5191-3
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/csics.2009.5315803
  • Filename
    5315803