• DocumentCode
    2271098
  • Title

    GaN Technology for RF Electronics - Development Status in Europe

  • Author

    Blanck, H. ; Splettstößer, J. ; Floriot, D.

  • Author_Institution
    United Monolithic Semicond. GmbH, Ulm, Germany
  • fYear
    2009
  • fDate
    11-14 Oct. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. This paper will try to summarize the current status achieved and illustrate it with a few representative examples. Due to the importance of the subject this paper will focus solely on the RF electronics related topics, which should be of major interest in the frame of this conference. Aspects covering material, devices up to circuits and module integration will be addressed.
  • Keywords
    III-V semiconductors; gallium compounds; microwave devices; radiocommunication; semiconductor technology; wide band gap semiconductors; GaN; RF electronics; module integration; Consumer electronics; Europe; Food technology; Gallium arsenide; Gallium nitride; HEMTs; III-V semiconductor materials; Radio frequency; Space technology; Thermal management;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
  • Conference_Location
    Greensboro, NC
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-5191-3
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/csics.2009.5315810
  • Filename
    5315810