DocumentCode
2271098
Title
GaN Technology for RF Electronics - Development Status in Europe
Author
Blanck, H. ; Splettstößer, J. ; Floriot, D.
Author_Institution
United Monolithic Semicond. GmbH, Ulm, Germany
fYear
2009
fDate
11-14 Oct. 2009
Firstpage
1
Lastpage
4
Abstract
GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. This paper will try to summarize the current status achieved and illustrate it with a few representative examples. Due to the importance of the subject this paper will focus solely on the RF electronics related topics, which should be of major interest in the frame of this conference. Aspects covering material, devices up to circuits and module integration will be addressed.
Keywords
III-V semiconductors; gallium compounds; microwave devices; radiocommunication; semiconductor technology; wide band gap semiconductors; GaN; RF electronics; module integration; Consumer electronics; Europe; Food technology; Gallium arsenide; Gallium nitride; HEMTs; III-V semiconductor materials; Radio frequency; Space technology; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Conference_Location
Greensboro, NC
ISSN
1550-8781
Print_ISBN
978-1-4244-5191-3
Electronic_ISBN
1550-8781
Type
conf
DOI
10.1109/csics.2009.5315810
Filename
5315810
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