DocumentCode
2271330
Title
A 9-bit 100MS/s tri-level charge redistribution SAR ADC with asymmetric CDAC array
Author
Zhu, Xiaolei ; Chen, Yanfei ; Tsukamoto, Sanroku ; Kuroda, Tadahiro
Author_Institution
Keio Univ., Yokohama, Japan
fYear
2012
fDate
23-25 April 2012
Firstpage
1
Lastpage
4
Abstract
The capacitor digital-to-analog converter (CDAC) which affects the system performance of speed and linearity occupies the most area in successive approximation register (SAR) analog-to-digital converter (ADC). The performance of tri-level SAR ADC is well balanced between power and speed comparing to the conventional CDAC based architecture. In order to further improve the ADC performance in light of area and energy efficiencies, a partially asymmetric tri-level CDAC design technique is proposed to save the silicon cost and power as well. Combining the asymmetric CDAC approach with the tri-level charge redistribution technique makes it possible for the SAR ADC to achieve a 9-bit resolution with 4-bit + 3-bit split capacitor arrays. A 9-bit SAR ADC with CDAC calibration has been implemented in a 65nm CMOS technology and it achieves a peak SNDR of 50.1 dB and consumes 1.26 mW from a 1.2-V supply, corresponding to a FOM of 45fJ/conv.-step. The static performance of +0.4/-0.5 LSB DNL and +0.5/-0.7 LSB INL is achieved. The ADC has input capacitance of 180 fF and occupies an active area of 0.1*0.13 mm2.
Keywords
CMOS integrated circuits; analogue-digital conversion; digital-analogue conversion; low-power electronics; ADC performance; CDAC calibration; CMOS technology; LSB INL; asymmetric CDAC approach; asymmetric CDAC array; capacitor digital-to-analog converter; conventional CDAC based architecture; energy efficiency; input capacitance; noise figure 50.1 dB; partially asymmetric tri-level CDAC design technique; peak SNDR; power 1.26 mW; split capacitor arrays; static performance; successive approximation register analog-to-digital converter; system performance; tri-level SAR ADC; tri-level charge redistribution SAR ADC; trilevel charge redistribution technique; voltage 1.2 V; word length 9 bit; Arrays; CMOS integrated circuits; CMOS technology; Capacitance; Capacitors; Estimation; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on
Conference_Location
Hsinchu
ISSN
PENDING
Print_ISBN
978-1-4577-2080-2
Type
conf
DOI
10.1109/VLSI-DAT.2012.6212592
Filename
6212592
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