Temperature effect on IMC growth behavior of thin film copper-aluminum system in electronic packaging

Author

Ming, Xuefei ; Zhang, Yi

Author_Institution

Dept. of Mech. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2010

fDate

16-19 Aug. 2010

Firstpage

371

Lastpage

375

Abstract

It is widely accepted that wire bonding is the predominant method for the area of microelectronic packaging. Currently, copper wire has been studied to substitute the gold and aluminum ones in this process owing to its several advantages. However, the nanoscale interfacial characteristics of thermo sonic copper ball bonding on aluminum metallization should be carefully investigated. In this paper, a serious of examination is designed to find the IMC generates in the beginning of the electronic packaging process in two different kinds of temperature. Then, the data and results in the experiment are demonstrated in detail. Finally, some conclusions concerning the experiment are drawn from the previous work.

Keywords

aluminium; copper; gold; integrated circuit metallisation; integrated circuit packaging; lead bonding; Al-Cu; Au; IMC growth behavior; aluminum metallization; copper wire; gold; intermetallic compound; microelectronic packaging; nanoscale interfacial characteristic; temperature effect; thermo sonic copper ball bonding; thin film copper-aluminum system; wire bonding; Aluminum; Bonding; Compounds; Copper; Gold; Intermetallic; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4244-8140-8

Type

conf

DOI

10.1109/ICEPT.2010.5582355

Filename

5582355