Hemispherical-grain polycrystalline silicon films: The dependence of geometric characteristics of grains on formation conditions

Author

Novak, Andrei V.

Author_Institution

MIET, Nat. Res. Univ. of Electron. Technol., Zelenograd, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

1

Lastpage

2

Abstract

The dependences of the main statistical characteristics of the surface (correlation functions, surface-height distribution functions, correlation length, width of interface), average height and lateral size of grains on the formation conditions have been determined by atomic force microscopy for hemispherical-grain polycrystalline silicon Films (HSG-Si). Dependence of grains shape on the deposition temperature and film thickness is found.

Keywords

atomic force microscopy; chemical vapour deposition; crystal microstructure; elemental semiconductors; semiconductor thin films; silicon; surface morphology; Si; atomic force microscopy; correlation functions; correlation length; deposition temperature; film thickness; grain average height; grain formation conditions; grain geometric characteristics; grain lateral size; grain statistical characteristics; hemispherical grain polycrystalline silicon films; interface width; surface height distribution functions; Correlation; Films; Grain size; Shape; Silicon; Surface morphology; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference (IVESC), 2014 Tenth International

Conference_Location

St. Petersburg

Print_ISBN

978-1-4799-5770-5

Type

conf

DOI

10.1109/IVESC.2014.6892046

Filename

6892046