Realization of real index-guided InGaAlP red lasers with buried tunnel junctions

Author

Lu, T.C. ; Wang, S.C. ; Shieh, H.M.

Author_Institution

Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2002

fDate

24-24 May 2002

Firstpage

546

Abstract

Summary form only given. We demonstrate an alternative way to achieve real index-guided InGaAlP lasers by introducing buried tunnel junctions. Introducing buried tunnel junctions in InGaAlP lasers has several advantages including selective tunneling current, self current blocking, real index-guided structure, low internal loss and one step re-growth. The laser structure is grown in a low pressure MOCVD system. Laser output power and forward voltage versus current characteristics for two types of lasers under CW operation are reported at room temperature.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; buried layers; gallium compounds; indium compounds; optical losses; quantum well lasers; tunnelling; waveguide lasers; CW operation; In/sub 0.2/Ga/sub 0.8/As-GaAs; InGaAlP; buried tunnel junctions; forward voltage versus current characteristics; laser output power; low internal loss; low pressure MOCVD system; one step re-growth; real index-guided InGaAlP red lasers; room temperature; selective tunneling current; self current blocking; stabilized fundamental transverse mode; Current density; Degradation; Diode lasers; Electrons; Laser modes; Lasers and electrooptics; Quantum dot lasers; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034306

Filename

1034306