Performance of submicron CMOS devices and gates with substrate biasing

This paper reports the results of an extensive simulation to study the effect of body bias engineering on the performance of deep submicron technology circuits. Reverse body bias (RBB) is very useful in reducing a device´s off-state leakage current and hence standby power. This reduction is more effective as the temperature increases. Forward body bias (FBB) suppresses short channel effects and hence improves V_t roll-off and reduces the gate delays. This improvement is enhanced as the power supply voltage decreases. However, the power dissipation and power delay product have increased under this biasing condition. A good strategy is to apply a forward body bias on critical path only to improve speed without significant increase in power dissipation