DocumentCode
2274818
Title
Key process technology for high density 64M FeRAM and beyond
Author
Yamakawa, K. ; Ozaki, T. ; Kanaya, H. ; Kunishima, I. ; Kumura, Y. ; Shimojo, Y. ; Shuto, S. ; Hidaka, O. ; Yamada, Y. ; Yamazaki, S. ; Shiratake, S. ; Takashima, D. ; Miyakawa, T. ; Ohtsuki, S. ; Hamamoto, T.
Author_Institution
Toshiba Corp. Semicond. Co., Yokohama
fYear
2007
fDate
27-31 May 2007
Firstpage
14
Lastpage
18
Abstract
Difficulty to achieve high density FeRAMs with sub-micron ferroelectric capacitors is widely understood due to damage to the capacitors. Key process techniques such as high quality ferroelectric film deposition, electrode preparation, capacitor RIE and hydrogen barrier structure formation are introduced for 64M FeRAMs with sub micron high reliability PZT capacitors.
Keywords
ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; lead compounds; random-access storage; thin film capacitors; PZT; ferroelectric capacitors; ferroelectric film; high density FeRAM; hydrogen barrier structure; Capacitors; Electrodes; Ferroelectric films; Ferroelectric materials; Hydrogen; MOCVD; Nonvolatile memory; Random access memory; Robustness; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location
Nara
ISSN
1099-4734
Print_ISBN
978-1-4244-1334-8
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2007.4393153
Filename
4393153
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