Modeling challenges of advanced doping technologies

Author

Wu, Jeff ; Wang, Anson C-C ; Liu, C.-W. ; Yu, T.-H. ; Cheng, Ya-Yun ; Shen, Tzer-Min ; Chan, Chien-Tai ; Tsai, Gino

Author_Institution

Taiwan Semicond. Manuf. Co. (TSMC) Ltd., Hsinchu, Taiwan

fYear

2012

fDate

14-15 May 2012

Firstpage

150

Lastpage

155

Abstract

Ultra shallow junction with high activation is necessary to reduce source/drain resistance and enable continued device scaling. The adoption of non-planar device architectures also presents new doping profile engineering challenges due to the 3D nature of the channel and source/drain regions. Advanced doping technologies are emerging to meet the new USJ and profile engineering challenge. Due to the increasing process complexity and development cost, predictive TCAD modeling will be critical. The modeling challenges of the advanced doping technologies are discussed.

Keywords

Monte Carlo methods; doping profiles; ion implantation; technology CAD (electronics); advanced doping technologies; continued device scaling; development cost; doping profile engineering; nonplanar device architectures; predictive TCAD modeling; process complexity; source drain resistance; ultra shallow junction; Abstracts; Analytical models; Ions; MOSFET circuits; Monte Carlo methods; Semiconductor device modeling; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2012 12th International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4673-1258-5

Electronic_ISBN

978-1-4673-1256-1

Type

conf

DOI

10.1109/IWJT.2012.6212831

Filename

6212831