Effects of Barium Substitution on the Properties of Pb(Mg1/3Nb2/3)O3 Thin Film Made by MOCVD Using Ultrasonic Nebulization

Lead magnesium niobate Pb(Mg_1/3Nb_2/3)O₃ (abbreviated PMN) films is well known as a relaxor-based ferroelectric materials, which have attracted considerable attention for their applications including ferroelectric nonvolatile memory, capacitors, piezoelectric and pyroelectric devices due to polarization switching, high dielectric constant, excellent piezoelectric and pyroelectric properties. However, the use of this material is not realized, because it is difficult to prepare the perovskite single phase PMN films without pyrochlore phase. The presence of the pyrochlore phase in the films, even in small quantities, decreases the dielectric constant and ferroelectric or piezoelectric performance of the films. It is well known that Ba substitution to Pb site of PMN promotes the perovskite phase stabilization. So we have deposited [Ba_xPb(_1-x)(Mg_1/3Nb_2/3)O₃] films by MOCVD using ultrasonic nebulization and effects of Ba substitution quantity on the structural and electrical Properties of the films were investigated and we could obtained [Ba_xPb(_1-x)(Mg_1/3Nb_2/3)O₃] films with only perovskite structure and they have excellent crystallographic and ferroelectric properties.