Passively mode-locked surface-emitting semiconductor laser with nearly 1 W average power

Author

Aschwanden, A. ; Ring, R.H. ; Paschotta, R. ; Gini, E. ; Morier-Genoud, Francois ; Keller, Ulrich

Author_Institution

Inst. of Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

2002

fDate

24-24 May 2002

Firstpage

596

Abstract

Summary from only given. We recently demonstrated the first continuously pumped and passively mode-locked vertical-external-cavity surface-emitting laser (VECSEL). This laser was mode-locked with a semiconductor saturable absorber mirror (SESAM). Now we present as much as 950 mW in 15-ps pulses. The repetition rate was also increased to 6 GHz.

Keywords

laser mirrors; laser mode locking; optical pumping; optical saturable absorption; quantum well lasers; surface emitting lasers; 15 ps; 950 mW; InGaAs-GaAs; average output powers; average power; continuously pumped; output powers; passively mode-locked; passively mode-locked surface-emitting semiconductor laser; ps pulses; repetition rate; semiconductor saturable absorber mirror; vertical-external-cavity surface-emitting laser; Diode lasers; Distributed Bragg reflectors; Holographic optical components; Holography; Laser mode locking; Laser modes; Power generation; Power lasers; Semiconductor lasers; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034369

Filename

1034369