DocumentCode
2275497
Title
Preparation and Properties of Lithium-doped K0.5 Na0.5 NbO3 Thin Films by Chemical Solution Deposition
Author
Maiwa, H. ; Kogure, T. ; Ishizaka, K. ; Hayashi, T.
Author_Institution
Shonan Inst. of Technol., Fujisawa
fYear
2007
fDate
27-31 May 2007
Firstpage
110
Lastpage
111
Abstract
Lithium doped K0.5Na0.5NbO3 films were fabricated by chemical solution deposition on Pt/TiO2/SiO2/Si substrates. Homogeneous and stable precursor solutions were prepared by controlling the reaction of starting metal alkoxides. Perovskite KNN single phase thin films were successfully synthesized on Pt/TiOx/SiO2/Si substrates. The 1.2 mum-thick KLNN film annealed at 650degC exhibited a ferroelectric polarization hysteresis loops at -250degC. The loop at room temperature is round in shape indicating the film contains leakage components. Dielectric constant under zero bias is 490 at room temperature. Typical upside-down butterfly DC bias-capacitance curve was obtained in the KLNN film capacitors at room temperature, indicating polarization reversal occurs in the obtained KLNN films.
Keywords
annealing; dielectric hysteresis; dielectric polarisation; doping profiles; ferroelectric capacitors; ferroelectric thin films; liquid phase deposition; lithium; permittivity; platinum; potassium compounds; silicon; silicon compounds; sodium compounds; titanium compounds; DC bias-capacitance curve; K0.5Na0.5NbO3:Li; KLNN film capacitors; Pt-TiO2-SiO2-Si; annealing; chemical solution deposition; dielectric constant; ferroelectric polarization hysteresis loops; homogeneous precursor solutions; lithium-doped thin films; metal alkoxides; perovskite KNN single phase thin films; polarization; temperature -250 C; temperature 293 K to 298 K; temperature 650 C; Annealing; Chemicals; Dielectric substrates; Ferroelectric films; Lithium; Niobium compounds; Polarization; Semiconductor films; Semiconductor thin films; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location
Nara
ISSN
1099-4734
Print_ISBN
978-1-4244-1334-8
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2007.4393184
Filename
4393184
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