DocumentCode
2275515
Title
Physical and electrical characteristics of SBT ferroelectric thin films with different thickness and varied stresses during annealing
Author
Hsu, F.Y. ; Leu, C.C. ; Hu, C.T.
Author_Institution
Nat. Tsing Hua Univ., Hsinchu
fYear
2007
fDate
27-31 May 2007
Firstpage
112
Lastpage
114
Abstract
In present study, we applied either a tensile or compressive mechanical stress during annealing on SrBi2Ta2O9 (SBT) ferroelectric thin films with different thickness to investigate the effects of both thickness and stress on the physical and electric properties. The application of external stress during annealing led to the variety of both microstructures and constituted phases (ratio of perovskite vs, pyrochlore) in the films. These variations of structures became more significant in the relatively thinner films. Since the electrical properties of ferroelectrics were strongly depended on their microstructure, domain structure, and constituted phases, our ferroelectric samples demonstrated the distinct ferroelectric behaviors with the condition of various stressing and thickness.
Keywords
annealing; bismuth compounds; crystal microstructure; electric domains; ferroelectric materials; ferroelectric thin films; strontium compounds; SBT ferroelectric thin films; SrBi2Ta2O9; annealing; compressive mechanical stress; domain structure; electrical properties; microstructures; perovskite-pyrochlore ratio; physical properties; Annealing; Compressive stress; Electric variables; Ferroelectric films; Ferroelectric materials; Microstructure; Residual stresses; Temperature; Tensile stress; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location
Nara
ISSN
1099-4734
Print_ISBN
978-1-4244-1334-8
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2007.4393185
Filename
4393185
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