New bridge snubber for suppressing reverse recovery effects of CoolMOS™

Author

Guo, Ben ; Li, Siqi ; Jiang, Xiaohua ; Kanie, Tetsuo

Author_Institution

Dept. of Electr. Eng., Tsinghua Univ., Beijing, China

fYear

2011

fDate

20-23 Aug. 2011

Firstpage

1

Lastpage

5

Abstract

Severe reverse recovery effects of the intrinsic diode is a big problem in the application of CoolMOS™, resulting surge voltage and current, extra switching loss and electro magnetic interference (EMI). A new bridge snubber with energy recovery is presented in this paper for suppressing reverse recovery effects in CoolMOS™ inverters. It includes both turn-on and turn-off snubber cells and can return the absorbed energy to the load. It is verified through simulation and experiment that the proposed snubber can significantly reduce surge current during switching and raise the efficiency.

Keywords

electromagnetic interference; interference suppression; invertors; losses; snubbers; surge protection; switching convertors; CoolMOS™ inverters; bridge snubber; electromagnetic interference; intrinsic diode; reverse recovery effect suppression; surge current; surge voltage; switching loss; turn-off snubber cells; turn-on snubber cells; Capacitors; Inverters; MOSFETs; Pulse width modulation; Snubbers; Surges; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Machines and Systems (ICEMS), 2011 International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4577-1044-5

Type

conf

DOI

10.1109/ICEMS.2011.6073554

Filename

6073554