DocumentCode
2275783
Title
Power device characteristic of five-level double converter with different DC divided link voltage
Author
Yuji, Kodera ; Takafumi, Matsumoto ; Matsuse, Kouki
Author_Institution
Dept. of Electr. Eng., Meiji Univ., Kawasaki, Japan
fYear
2011
fDate
20-23 Aug. 2011
Firstpage
1
Lastpage
6
Abstract
This paper researches off-voltage of each IGBT of five-level double converter with different DC divided link voltage and proposes 2-series connection of some IGBTs in main circuit [2]. 5-Level Double converter has DC link are divided 5 levels, P2, P1, NPP, N1, N2. In this research, the ratio of P2, P1, N1, and N2 potentials is 1:2:2:1 respectively [2]. However, this method has a problem. Each IGBT have off-voltages that have different values. This problem makes each IGBT different loss. To solve this issue, we propose 2-series connection of IGBT. And the method makes the off-voltage uniformly.
Keywords
insulated gate bipolar transistors; power convertors; DC divided link voltage; IGBT 2-series connection; IGBT off-voltage; five-level double converter; power device characteristic; Electric potential; Insulated gate bipolar transistors; Inverters; Logic gates; Proposals; Switches; Vectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Machines and Systems (ICEMS), 2011 International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4577-1044-5
Type
conf
DOI
10.1109/ICEMS.2011.6073559
Filename
6073559
Link To Document