Post Cu CMP cleaning process evaluation for 32nm and 22nm technology nodes

Author

Tseng, Wei-tsu ; Canaperi, Donald ; Ticknor, Adam ; Devarapalli, Vamsi ; Tai, Leo ; Economikos, Laertis ; MacDougal, James ; Bunke, Christine ; Angyal, Matthew ; Muncy, Jennifer ; Chen, Xiaomeng ; Zhang, John ; Fang, Qiang ; Zheng, Jianping

Author_Institution

Semicond. R&D Center, IBM, Hopewell Junction, NY, USA

fYear

2012

fDate

15-17 May 2012

Firstpage

57

Lastpage

62

Abstract

Optimization of post Cu CMP cleaning performance can be accomplished through dilution ratio tuning and pad rinse of clean chemicals. Excessive chemical etching as well as megasonic power can induce high Cu roughness. Generation of hollow metal and Cu dendrite defects depends not only on the clean chemistry but also the queue time between plating and anneal and between CMP and cap. AFM and XPS provide insights into the cleaning mechanism. EM and TDDB tests are the ultimate tests for the effectiveness of post Cu CMP cleaning.

Keywords

chemical mechanical polishing; cleaning; electroplating; etching; mechanical testing; AFM; CMP cleaning performance; CMP cleaning process evaluation; Cu; TDDB test; XPS; chemical etching; clean chemicals; clean chemistry; cleaning mechanism; dendrite defects; dilution ratio tuning; hollow metal; megasonic power; optimization; pad rinse; plating; size 22 nm; size 32 nm; technology nodes; ultimate test; Annealing; Chemicals; Frequency modulation; Metals; Surface cleaning; Cu CMP; defect reduction; post clean;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI

Conference_Location

Saratoga Springs, NY

ISSN

1078-8743

Print_ISBN

978-1-4673-0350-7

Type

conf

DOI

10.1109/ASMC.2012.6212868

Filename

6212868