• DocumentCode
    2276426
  • Title

    Effect of gamma-ray irradiation on permittivity and dielectric loss of polymer insulating materials

  • Author

    Gao, Y. ; Du, B.X.

  • Author_Institution
    Sch. of Electr. Eng. & Autom., Tianjin Univ., Tianjin, China
  • fYear
    2012
  • fDate
    17-20 Sept. 2012
  • Firstpage
    229
  • Lastpage
    232
  • Abstract
    The effect of gamma-ray irradiation on relative permittivity, ac conductivity and dielectric loss tangent of epoxy resin and polyethylene has been investigated. Laminated samples were irradiated by 60Co gamma source at room temperature in air with a dose rate of 10 kGy/h and the total dose were 100 kGy and 1000 kGy. The dielectric properties were measured by using a Precision LCR Meter (Agilent E4980A) with frequency range between 0.5 kHz and 2 MHz. FTIR spectrum as well as DSC curve for the each sample was also measured to understand the change in physical or chemical structure induced by the irradiation. Obtained results show the dependence of the dielectric properties upon the total dose which is varied with the material. It is suggested that the change in the dielectric properties is due to gamma-ray irradiation induced chemical reactions which result in the variation of material structure.
  • Keywords
    dielectric loss measurement; dielectric losses; dielectric materials; epoxy insulators; gamma-ray effects; insulating materials; laminations; permittivity; polyethylene insulation; AC conductivity; Agilent E4980A; DSC curve; FTIR spectrum; chemical reaction; dielectric loss tangent; dielectric property measurement; epoxy resin; frequency 0.5 kHz; frequency 2 MHz; gamma-ray source irradiation effect; laminated sample; material structure; polyethylene; polymer insulating material; precision LCR meter; relative permittivity; temperature 293 K to 298 K; Chemicals; Conductivity; Dielectrics; Erbium; Materials; Permittivity; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Voltage Engineering and Application (ICHVE), 2012 International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4673-4747-1
  • Type

    conf

  • DOI
    10.1109/ICHVE.2012.6357027
  • Filename
    6357027