Crystalline and Ferroelectric Properties of 0.68BiFeO3-0.32PbTiO3 Multiferroic Thin Film Prepared by Sol-Gel Method

Author

Liang, Jin-e ; Liu, Juanni ; Jin, Yong ; Li, Jing ; Yu, Tian ; Xiao, Dinquan ; Zhu, Jianguo

Author_Institution

Sichuan Univ., Chengdu

fYear

2007

fDate

27-31 May 2007

Firstpage

383

Lastpage

385

Abstract

0.68BiFeO₃-0.32PbTiO₃ (BFPT) films were prepared on SiO₂/Si and Pt/Ti/SiO₂/Si substrates by sol-gel method. The XRD patterns of BFPT films show that BFPT films have good crystalline properties, and there are no other peaks of impure phases except for the peaks of BFPT thin film and the substrates. The thickness of BFPT thin films that annealed at 600? for 10 min was about 860 nm when deposited 8 layers. The clear interface is observed between BFPT film and the substrate. The remanent polarization of BFPT was rather high, and the Pr value was about 70muC/cm².

Keywords

X-ray diffraction; bismuth compounds; dielectric polarisation; ferroelectric materials; ferroelectric thin films; lead compounds; multiferroics; sol-gel processing; BiFeO₃-PbTiO₃; Pt-Ti-SiO₂-Si; Si; XRD; crystalline properties; ferroelectric properties; multiferroic thin film; remanent polarization; sol-gel method; time 10 min; Crystallization; Ferroelectric films; Ferroelectric materials; Iron; Lead compounds; Leakage current; Semiconductor films; Substrates; Temperature; Transistors; 0.68BiFeO3-0.32PbTiO3 films; ferroelectricity; sol-gel;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393272

Filename

4393272