DocumentCode
2277032
Title
GaAs amplifiers for radar and mobile communication systems
Author
Schopf, K.J. ; Pettenpaul, E.
Author_Institution
Semicond. Group, Siemens AG, Munich, Germany
fYear
1994
fDate
5-7 Oct 1994
Firstpage
59
Lastpage
67
Abstract
GaAs MMICs for frequency bands up to and above the X-band have been designed and manufactured in the planar DIOM process exhibiting not only performance data comparable to much higher cost processes but excellent uniformity and repeatability too. The application range for the supply voltage can vary from as low as 2.7 V to 12 V for receive and transmit circuits
Keywords
III-V semiconductors; MMIC amplifiers; gallium arsenide; mobile communication; radar equipment; 2.7 to 12 V; GaAs; GaAs MMIC amplifiers; X-band; mobile communication systems; planar DIOM proces; radar systems; receive circuits; transmit circuits; Consumer electronics; Europe; FETs; Frequency; Gallium arsenide; MMICs; Mobile communication; Phased arrays; Radar; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on
Conference_Location
Duisburg
ISSN
0938-8028
Print_ISBN
0-7803-2409-9
Type
conf
DOI
10.1109/INMMC.1994.512513
Filename
512513
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