DocumentCode
2277207
Title
Multiferroic Double-layer BiFeO3 -CoFe2 O4 Composite Films Prepared by Pulsed-Laser Deposition
Author
Zhu, Yanyan ; Cheng, Jinrong ; Yu, Shengwen ; Wu, Wenbiao ; Meng, Zhongyan
Author_Institution
Shanghai Univ., Shanghai
fYear
2007
fDate
27-31 May 2007
Firstpage
415
Lastpage
417
Abstract
Multiferroic BiFeO3-CoFe2O4 (BFO-CFO) double-layer thin film has been deposited on platinized silicon substrate by pulsed-laser deposition. The BFO and CFO thin layers are deposited at 450 and 600 degC respectively. The diffraction peaks from spinel CoFe2O4 phases can be observed from the x-ray diffraction patterns of the double-layer BFO-CFO films. Dielectric constant and loss of the BFO-CFO films are of around 60 and 0.06 respectively, changing little with increasing the frequency. The leakege current density is about 10-6 A/cm2 under the field of 100 kV/cm. BFO-CFO thin films exhibit good ferromagnetic properties with the saturation magnetization of 120 emu/cm3 .
Keywords
X-ray diffraction; bismuth compounds; cobalt compounds; composite materials; dielectric losses; ferroelectric thin films; ferromagnetism; leakage currents; magnetisation; permittivity; pulsed laser deposition; silicon; BiFeO3-CoFe2O4; Si; X-ray diffraction; dielectric constant; dielectric loss; ferromagnetic properties; leakege current density; multiferroic double-layer composite thin film; pulsed-laser deposition; saturation magnetization; temperature 450 C; temperature 600 C; Current density; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Frequency; Semiconductor thin films; Silicon; Sputtering; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location
Nara
ISSN
1099-4734
Print_ISBN
978-1-4244-1334-8
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2007.4393283
Filename
4393283
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