Voltage-controlled intracavity THz generator for self-starting Ti:sapphire lasers

Author

Darmo, J. ; Muller, T. ; Strasser, G. ; Unterrainer, K. ; Le, T. ; Stingl, A.

Author_Institution

Inst. of Solid-State Electron., Univ. of Technol. Vienna, Austria

fYear

2002

fDate

24-24 May 2002

Abstract

A new scheme for the intracavity generation of terahertz radiation in femtosecond mode-locked Ti:sapphire lasers is presented. The scheme combines advantages of a fast saturable semiconductor Bragg mirror with that of a photoconductive THz emitter. It significantly increases the efficiency of the intracavity THz generation. In addition, the output THz radiation can be electrically modulated at frequencies up to 100 kHz.

Keywords

high-speed optical techniques; laser mirrors; laser mode locking; optical saturable absorption; photoconducting devices; sapphire; semiconductor quantum wells; solid lasers; submillimetre wave lasers; titanium; 100 kHz; Al/sub 2/O/sub 3/:Ti; electrically modulated; fast saturable semiconductor Bragg mirror; intracavity THz generation; intracavity generation; mode-locked lasers; photoconductive THz emitter; self-starting Ti:sapphire lasers; voltage-controlled intracavity THz generator; Gallium arsenide; Laser mode locking; Mirrors; Molecular beam epitaxial growth; Power generation; Solid lasers; Stimulated emission; Ultrafast electronics; Ultrafast optics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034470

Filename

1034470