On the optimal shape and location of silicided source and drain contacts

Author

Oldiges, Phil ; Murthy, Cheruw ; Wang, Xinlin ; Fung, Sam ; Purtell, Robert

Author_Institution

Dev. Center, IBM Semicond. Res., Hopewell Junction, NY, USA

fYear

2002

fDate

2002

Firstpage

39

Lastpage

42

Abstract

A detailed simulation and analysis of the source/drain resistance is performed. It is shown that the placement and depth of silicide regions can have a strong influence on the total source/drain resistance. Simulations further show that moving the silicided regions closer to the channel of a device will not necessarily decrease source/drain resistance, and may actually cause the resistance to increase. Lumped contact resistance, distributed resistance, Schottky contact models, and a new local distributed resistance model are compared.

Keywords

MOSFET; Schottky barriers; contact resistance; semiconductor device models; Schottky contact models; distributed resistance; drain contacts; local distributed resistance model; lumped contact resistance; optimal shape; source contacts; source/drain resistance; Analytical models; Contact resistance; Doping profiles; Microelectronics; Ohmic contacts; Research and development; Schottky barriers; Semiconductor process modeling; Shape; Silicides;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on

Print_ISBN

4-89114-027-5

Type

conf

DOI

10.1109/SISPAD.2002.1034511

Filename

1034511