2D simulation of a buried-heterostructure tunable twin-guide DFB laser diode

Author

Schneider, L. ; Witzig, A. ; Streiff, M. ; Pfeiffer, M. ; Bregy, A. ; Schmidt, B. ; Fichtner, W.

Author_Institution

Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

2002

fDate

2002

Firstpage

55

Lastpage

58

Abstract

A 2D simulation of an InGaAsP-InP buried-heterostructure tunable twin-guide (TTG) DFB laser diode is performed. The device structure is optimized with respect to maximal tuning range and output power. To minimize the current leakage around the active region, a p-n-p-n current blocking region is also modeled and its effect on the laser characteristics is discussed. Good agreement between simulation and measurements is obtained.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor device models; 2D simulation; InGaAsP-InP; buried-heterostructure tunable twin-guide DFB laser diode; current leakage; device structure; maximal tuning range; output power; p-n-p-n current blocking region; Diode lasers; Distributed feedback devices; Equations; Laser modes; Laser tuning; Optical refraction; Optical scattering; Optical tuning; Quantum well lasers; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on

Print_ISBN

4-89114-027-5

Type

conf

DOI

10.1109/SISPAD.2002.1034515

Filename

1034515