• DocumentCode
    2278739
  • Title

    Monte Carlo simulation of consecutive implants into SiO2 capped Si

  • Author

    Li, Di ; Yang, Shyh-Horng ; Machala, Chuck ; Lin, Li ; Tasch, Al F. ; Hornung, B. ; Li-Fatou, Andrei ; Banerjee, Sanjay K.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    217
  • Lastpage
    220
  • Abstract
    The low energy as-implanted profile is very sensitive to the cap oxide layer thickness and PAI conditions. In this work, theoretical and experimental studies have been carried out quantitatively to investigate these dependencies. Using ZBL pair-specific inter-atomic potentials in the Monte Carlo ion implantation simulator, UT-MARLOWE, consecutive implants of PAI and PLDD were simulated and above effects were accurately captured.
  • Keywords
    Monte Carlo methods; elemental semiconductors; integrated circuit modelling; ion implantation; semiconductor device models; semiconductor doping; silicon; silicon compounds; Monte Carlo ion implantation simulator; Monte Carlo simulation; PAI conditions; Si-SiO2; SiO2 capped Si; UT-MARLOWE; ZBL pair-specific inter-atomic potentials; cap oxide layer thickness; consecutive implants; low energy as-implanted profile; Artificial intelligence; Circuit simulation; Electrons; Instruments; Ion implantation; Microelectronic implants; Monte Carlo methods; Nuclear electronics; Predictive models; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
  • Print_ISBN
    4-89114-027-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2002.1034556
  • Filename
    1034556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2278739