MEMS-based piezoelectric micro cantilever using LaNiO3 buffered PZT thin film

Author

Kobayashi, Takeshi ; Kondo, Ryuichi ; Nakamura, Kentaro ; Ichiki, Masaaki ; Maeda, Ryutaro

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki

fYear

2007

fDate

27-31 May 2007

Firstpage

717

Lastpage

720

Abstract

We have fabricated piezoelectric micro cantilevers using LaNiO₃ (LNO) buffered PZT thin film through microelectromechanical systems (MEMS) micro fabrication process. The micro cantilevers have been fabricated from Pt/Ti/LNO/PZT/LNO/Pt/Ti/SiO₂ or Pt/Ti/PZT/Pt/Ti/SiO₂ multilayers deposited on SOI wafers. The PZT thin films without LNO thin films were degraded through the MEMS micro fabrication process. We have found that the LNO thin films can avoid the degradation. DC actuation of the micro cantilevers using LNO buffered PZT thin films has resulted in symmetric butterfly curve. The transverse piezoelectric constant of LNO buffered PZT thin films (-d₃₁ = 120 pm/V) is higher than that of the PZT thin films without LNO thin films (70 pm/V).

Keywords

lanthanum compounds; lead compounds; micromechanical devices; multilayers; piezoelectric thin films; silicon-on-insulator; zirconium compounds; DC actuation; LaNiO₃-PZT; MEMS-based piezoelectric micro cantilever; SOI wafers; SiJk; buffered PZT thin film; microelectromechanical systems micro fabrication process; multilayers; transverse piezoelectric constant; Conductive films; Degradation; Electrodes; Fabrication; Microelectromechanical devices; Micromechanical devices; Nonhomogeneous media; Piezoelectric films; Sputtering; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393381

Filename

4393381