• DocumentCode
    2278883
  • Title

    Progress in predicting transient diffusion

  • Author

    Rafferty, C.

  • Author_Institution
    Bell Labs., Lucent Technol., USA
  • fYear
    1997
  • fDate
    8-10 Sept. 1997
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Transient diffusion accounts for the majority of profile displacement in many modern processes. The last few years have seen considerable progress in understanding this anomalous diffusion, and predictive models have already been deployed in process development. Nevertheless, the evolving reduction in junction depth continues to challenge modeling capability. This work critically re-examines the theoretical basis of the present models and explores their limitations.
  • Keywords
    diffusion; doping profiles; semiconductor doping; semiconductor process modelling; dopant profile; junction depth; predictive model; transient diffusion; Artificial intelligence; Charge carrier processes; Electron mobility; Equations; Photonic band gap; Predictive models; Semiconductor process modeling; Silicon; Steady-state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
  • Conference_Location
    Cambridge, MA, USA
  • Print_ISBN
    0-7803-3775-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.1997.621322
  • Filename
    621322