DocumentCode
2278883
Title
Progress in predicting transient diffusion
Author
Rafferty, C.
Author_Institution
Bell Labs., Lucent Technol., USA
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
1
Lastpage
4
Abstract
Transient diffusion accounts for the majority of profile displacement in many modern processes. The last few years have seen considerable progress in understanding this anomalous diffusion, and predictive models have already been deployed in process development. Nevertheless, the evolving reduction in junction depth continues to challenge modeling capability. This work critically re-examines the theoretical basis of the present models and explores their limitations.
Keywords
diffusion; doping profiles; semiconductor doping; semiconductor process modelling; dopant profile; junction depth; predictive model; transient diffusion; Artificial intelligence; Charge carrier processes; Electron mobility; Equations; Photonic band gap; Predictive models; Semiconductor process modeling; Silicon; Steady-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621322
Filename
621322
Link To Document