DocumentCode
2278896
Title
Finite element analysis of stress evolution in Si based front and back ends micro structures
Author
Senez, Vincent ; Armigliato, Aldo ; Carlotti, Giovanni ; Carnevale, Gianpietro ; Jaouen, H. ; De Wolf, Ingrid
Author_Institution
IEMN-ISEN, Villeneuve d´´Ascq, France
fYear
2002
fDate
2002
Firstpage
247
Lastpage
252
Abstract
Nowadays, silicon technologies with feature sizes around 100 nm are used in the microelectronics industry to produce gigabits integrated circuits. The prime part of numerical simulation in their development is now well established. One of the purpose of the numerical analyses is the improvement of the mechanical reliability. We synthetize in this paper various works we have performed on the macroscopical modeling and simulation of stress problems and their effects in silicon technologies.
Keywords
elemental semiconductors; finite element analysis; integrated circuit modelling; integrated circuit reliability; micromechanical devices; silicon; stress analysis; Si; Si technology; finite element analysis; gigabits integrated circuits; microelectronics industry; numerical simulation; stress evolution; Electron beams; Finite element methods; Geometry; Manufacturing; Microelectronics; Numerical models; Numerical simulation; Predictive models; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN
4-89114-027-5
Type
conf
DOI
10.1109/SISPAD.2002.1034565
Filename
1034565
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