V-band MMIC low-noise amplifier design based on distributed active device model

Author

Jang, Byung-Jun ; Yom, In-Bok ; Lee, Seong-Pal

Author_Institution

ETRI, Taejon, South Korea

Volume

1

fYear

2001

fDate

2001

Firstpage

25

Abstract

A V-band two stage MMIC low-noise amplifier using 0.15 μm pHEMT based on a distributed active device model has been designed. This model is successful in constructing the equivalent circuit of HEMT that cannot be scaled from a standard HEMT model. An MMIC amplifier based on the distributed model and careful EM simulation exhibits a maximum gain of 9.6 dB and a minimum noise figure of 3.6 dB at 61 GHz. This results indicate that the distributed HEMT model is effective for the design V-band MMIC low noise amplifiers

Keywords

HEMT integrated circuits; MMIC amplifiers; circuit simulation; equivalent circuits; field effect MIMIC; integrated circuit modelling; integrated circuit noise; millimetre wave amplifiers; 0.15 micron; 3.6 dB; 61 GHz; 9.6 dB; EM simulation; MMIC low-noise amplifier; V-band; distributed active device model; equivalent circuit; minimum noise figure; pHEMT; Distributed amplifiers; Equivalent circuits; Foundries; Frequency; HEMTs; Low-noise amplifiers; MMICs; Noise measurement; PHEMTs; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985579

Filename

985579