DocumentCode
2279390
Title
Simulation of power rectifiers in SPICE
Author
McMurray, William
fYear
1990
fDate
7-12 Oct. 1990
Firstpage
1569
Abstract
The behavior of the SPICE BJT model in the reverse-recovery model of operation is analyzed, and a procedure for selecting the parameters from published or measured rectifier recovery test data is presented. Simulation of the resulting model in a typical test circuit verifies the technique by comparing the results with the original data. A method of selecting other model parameters to fit the forward drop of a rectifier is discussed.<>
Keywords
bipolar transistors; circuit analysis computing; power transistors; rectifying circuits; semiconductor device models; SPICE; bipolar junction transistors; forward drop; power rectifiers; reverse-recovery model; test circuit; Capacitance; Circuit simulation; Circuit testing; Diodes; Electric resistance; Laplace equations; Power engineering and energy; Rectifiers; SPICE; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location
Seattle, WA, USA
Print_ISBN
0-87942-553-9
Type
conf
DOI
10.1109/IAS.1990.152395
Filename
152395
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